Proses bilong wokim wok bilong Anti Riflektiv Film

Teknoloji Proses
Givim ol samting bilong groim na kisim ol ges: Givim ol samting bilong groim bilong anti reflektiv film, olsem SiO long sampela embodimen, taim em i givim ol ges sos i stret wantaim ol samting bilong groim, olsem SiH ₄, N ₂ O, na N ₂ ges sos kombinesen bilong ol ges i kam long en.
Formation of anti reflection layer: Use the same growth material to sequentially form at least two anti reflection layers of anti reflection film on the substrate layer. The substrate layer can include SiO layer, Si layer, and absorption layer in sequence along the direction of film growth. Taking the two-layer anti reflection layer (first anti reflection layer and second anti reflection layer) as an example, it is formed by proses bilong gro bilong epitaxial (olsem plasma i strongim kemikal steam deposisen rot PECVD). Ol spesifik step i olsem:
Sabstret prosesing: Bihain long semikondakta klinim proses long sabstret leya, putim sabstret leya long CVD deposisen ikwipmen.
Ol samting bilong wokim ol samting: Kontrolim temperaja antap long elektrod bilong CVD deposisen ikwipmen i go long 200-300 digri na tempereja bilong elektrod i stap daunbilo long 250-350 digri .
Gro bilong namba wan anti refleksen leya: Stretim namba wan deposisen paramita bilong ol CVD deposisen ikwipmen, wantaim namba wan volium flow reit bilong SiH ₄, N ₂ O, na N ₂, namba wan ges presa, namba wan RF pawa bilong CVD deposisen ikwipmen, namba wan liklik piksa deposisen taim, na ol narapela samting bilong en, na ol narapela samting bilong en, na ol narapela samting bilong en, na ol narapela samting bilong en. na wanpela refraktif indeks mak bilong 1.4-1.71.
Gro bilong namba tu anti refleksen leya: Stretim namba tu deposisen paramita bilong ol CVD deposisen ikwipmen, wantaim namba tu volium flow reit bilong SiH ₄, N ₂ O, na N ₂, namba tu ges presa, namba tu RF pawa bilong CVD deposisen ikwipmen, namba tu liklik piksa deposisen taim, na ol narapela samting bilong en, na ol narapela samting bilong en, na ol narapela samting bilong en, na ol narapela samting bilong en, na ol narapela samting bilong en. 10-200nm na wanpela refraktif indeks mak bilong 1.4-1.71.

Ol gutpela samting bilong teknoloji
Taim ol i yusim wankain gro samting, anti refleksen film i ken winim wankain anti refleksen ifek skelim wantaim ol stak anti refleksen film bilong ol narapela narapela samting, daunim ol kain ges sos ol i yusim, daunim hevi bilong proses bilong redim ol samting, na skruim spes bilong redi na wok eria bikos long stoa na yusim ol ges sos long taim bilong proses bilong redi.

Wok bilong wokim ol piksa bilong haibrid SiO ₂/TiO ₂ anti reflektiv piksa

Teknoloji Proses
Preperesen blong sabstret: Selektem ol transparent sabstret olsem glas, oganik glas, poliimid film, mo ol narawan., mo mekem tritmen blong karemaot mak blong mekem sua se i gat wan klin mo das-fri pes. Sapos i nid, wan saed o dabol saed polis i save mekem blong impruvum laet transmisen efisiens =
Preperesen bilong piksa prekursa: tetraethoksisilan (TEOS) na tetrabutil titanate (TBT) i go insait long etanol i gat NH ₄ OH long wanpela hap, na riaksen i stap long 9-12 aua bilong kisim wanpela transparent sol - gel sistem{2}}}
Coating and curing: the prepared sol gel system is evenly coated on the transparent substrate, and spin coating, spraying, brushing and other schemes can be used. After coating, the hybrid SiO ₂/TiO ₂ film precursor is placed in an oven for curing and annealing treatment, forming a multi-layer structure.
Sekula koting: Ripitim proses bilong kotim na oraitim sik inap long taim ol i kisim anti reflektif ifek ol i laikim i save kisim. Ol narapela narapela taim bilong kotim na ol sekwens bai i afektim wok bilong ol anti reflektif film, na risets na optimaisesen i nidim{1}}
Tritmen bilong graun: Bilong skruim strong bilong en na stap gut bilong anti reflektif piksa, ol inap kotim wanpela leit bilong haidrofilik na haidrofobik polima long pes bilong anti reflektif film.

Wok bilong wokim infraret anti reflektiv piksa
Teknoloji Proses
The infrared anti reflection film is based on silicon and coated with anti reflection films on both sides of the substrate. The film system structure of the anti reflection film is independent of each other as (HL) ^ S, where H represents the Si layer, L represents the SiO layer, S represents the period of the HL basic structure, and the value of S is an integer between 3-6. The Si layer is adjacent to sabstret, na SiO leya i stap long pes. Proses bilong kotim ol i yusim long pasim piksa leya long sabstret, wantaim SiO film leia olsem auter tru leit, we i gat bikpela pes hatnes na i no nidim narapela protektiv leit{{3} Na tu, SiO i gat wanpela refriektiv indeks i daunbilo, we i ken daunim pes reflektiviti na moa inkris long frefrered transmistance'

Wok bilong wokim ol samting bilong CO ₂ laser anti reflektiv piksa i no inap kamapim gutpela tingting
teknoloji proses
Ol samting ol i wokim pastaim: Ol i save mekim wok bilong stretim ol samting bilong bipo long yttrium fluoraid, kalsiam yttrium fluoraid, na ol samting bilong wokim ol piksa bilong zinc selenid bilong rausim ol samting i stap insait long ol samting bilong piksa wokabaut {{0}
Deposition film layer: The first yttrium fluoride layer, yttrium calcium fluoride layer, zinc selenide layer, and second yttrium fluoride layer are sequentially deposited on a zinc selenide substrate layer with a thickness of 3 ± 0.1mm by vacuum evaporation. The coverage area of each layer is over 95% of the pes eria bilong sabstret leya. Ol samting bilong tiknes bilong bodi bilong wan wan leit i olsem: tiknes bilong bodi bilong namba wan yttrium fluoraid leya em 95-100 nanomita; Tiknes bilong bodi bilong ytterbium kalsium fluoraid leit em 860-870 nanomita; Tiknes bilong bodi bilong zinc selenid leit em 240-250 nanomita; Tiknes bilong bodi bilong namba tu yttrium fluoraid leit em 95-100 nanomita.
 

Ol gutpela samting bilong teknoloji
The prepared anti reflection membrane has a simple structure and exquisite design. The four layer combination has the characteristics of high temperature resistance, high transmittance, firm membrane layer, complementary stress between membrane layers, and non rupture of membrane layers. It can meet the continuous operation of components under high temperature conditions, and the materials used in each layer are non radioactive, which will not cause damage to operators and the environment.